PESD18VF1BL Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 1— 2 September 2013
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
• Ultra low diode capacitance C_d = 0.35 pF
• High reverse standoff voltage V_RWM = 18 V
• Very small voltage dependency of the capacitance
• ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
3. Applications
• NFC antenna protection
• Protection of high-speed data lines
4. Quick reference data
Table 1.
Symbol
C_d
V_RWM
Quick reference data
Parameter
Conditions
diode capacitance f = 1 MHz; V_R = 0 V
reverse standoff
voltage
Min Typ Max Unit
0.28 0.35 0.5 pF
-
-
18 V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1
cathode (diode 1)
K2
cathode (diode 2)
Simplified outline
Graphic symbol
1
2
Transparent
top view
DFN1006-2 (SOD882)
1
2
sym045