PESD12VV1BL Datasheet, PDF (1/12 Pages) NXP Semiconductors – Very low capacitance bidirectional ESD protection diode

PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
 Bidirectional ESD protection of one line  ESD protection up to 30 kV
 Low diode capacitance C_d = 17 pF
 IEC 61000-4-2; level 4 (ESD)
 Rated peak pulse power: P_PPM = 290 W  IEC 61000-4-5 (surge); I_PPM = 7.8 A
 Ultra low leakage current I_RM < 1 nA  AEC-Q101 qualified
1.3 Applications
 Computers and peripherals
 Audio and video equipment
 Cellular handsets and accessories
 Portable electronics
 Communication systems
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
reverse standoff voltage
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
12
V
-
17
25
pF
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
cathode
Simplified outline
1
2
Transparent
top view
Graphic symbol
1
2
sym045