PEMD30 Datasheet, PDF(1/11 Page) NXP Semiconductors – NPN/PNP double resistor-equipped transistors R1 = 2.2 kW, R2 = open

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PEMD30 Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN/PNP double resistor-equipped transistors R1 = 2.2 kW, R2 = open

PEMD30; PUMD30

NPN/PNP double resistor-equipped transistors;

R1 = 2.2 kâ¦, R2 = open

Rev. 01 â 31 March 2006

Product data sheet

1. Product proï¬le

1.1 General description

NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)

plastic packages.

Table 1. Product overview

Type number Package

Philips

PEMD30

SOT666

PUMD30

SOT363

JEITA

SC-88

PNP/PNP

complement

PEMB30

PUMB30

NPN/NPN

complement

PEMH30

PUMH30

1.2 Features

I 100 mA output current capability

I Built-in bias resistors

I Simpliï¬es circuit design

I Reduces component count

I Reduces pick and place costs

1.3 Applications

I Low current peripheral driver

I Control of IC inputs

I Cost-saving alternative for BC847BPN

and BC847BVN

I Switching loads

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

VCEO

collector-emitter voltage

output current

bias resistor 1 (input)

open base

1.54 2.2

100 mA

2.86 kâ¦

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