PBYR2545CTB Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes schottky barrier

Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR2545CTB series
GENERAL DESCRIPTION
Dual low leakage, platinum barrier,
schottky rectifier diodes in a plastic
envelope suitable for surface
mounting, featuring low forward
voltage drop, absence of stored
charge. and guaranteed reverse
surge capability. The devices are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_RRM
V_F
I_O(AV)
PBYR25- 35CTB 40CTB 45CTB
Repetitive peak reverse 35
40
45
V
voltage
Forward voltage
0.62 0.62 0.62 V
Average output current
30
30
30
A
(both diodes conducting)
PINNING - SOT404
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
mb cathode
PIN CONFIGURATION
mb
2
13
SYMBOL
a1
a2
1
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_mb ≤ 136 ˚C
-
Average output current (both square wave; δ = 0.5;
-
diodes conducting)
T_mb ≤ 130 ˚C
RMS output current (both
-
diodes conducting)
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 130 ˚C
Non-repetitive peak forward t = 10 ms
-
current, per diode
t = 8.3 ms
-
sinusoidal T_j = 125 ˚C prior
to surge; with reapplied
I²t for fusing
V_RRM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode.
Non-repetitive peak reverse t_p = 100 µs
-
current per diode.
Storage temperature
-65
Operating junction temperature
-
MAX.
UNIT
-35 -40 -45
35 40 45
V
60 80 100 V
35 40 45
V
30
A
43
A
30
A
135
A
150
A
91
A²s
1
A
1
A
175
˚C
150
˚C
August 1996
1
Rev 1.000