PBSS9110D Datasheet, PDF (1/13 Pages) NXP Semiconductors – 100 V, 1 A PNP low VCEsat (BISS) transistor

PBSS9110D
100 V, 1 A PNP low V_CEsat (BISS) transistor
Rev. 03 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110D.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High-voltage DC-to-DC conversion
„ High-voltage MOSFET gate driving
„ High-voltage motor control
„ High-voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CEO collector-emitter voltage
I_C
collector current
I_CM
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = −1 A;
I_B = −100 mA
Min Typ Max
Unit
-
-
−100 V
-
-
−1
A
-
-
−3
A
[1] _-
170 320
mΩ