PBSS8110Z Datasheet, PDF (1/14 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor

PBSS8110Z
100 V, 1 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 8 January 2007
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS9110Z.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CEO
I_C
I_CM
collector-emitter voltage
collector current
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = 1 A;
I_B = 100 mA
Min Typ Max
-
-
100
-
-
1
-
-
3
[1] _-
160 200
Unit
V
A
A
mΩ