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PBSS8110Y Datasheet, PDF (1/13 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor | |||
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PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 â 21 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.
1.2 Features
 SOT363 package
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High efficiency reduces heat generation
1.3 Applications
 Major application segments:
 Automotive 42 V power
 Telecom infrastructure
 Industrial
 Peripheral driver:
 Driver in low supply voltage applications (e.g. lamps and LEDs)
 Inductive load driver (e.g. relays, buzzers and motors)
 DC-to-DC converter
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
-
-
100 V
-
-
1
A
-
-
3
A
-
-
200 mΩ
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