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PBSS8110X Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor | |||
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PBSS8110X
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
1.2 Features
 SOT89 package
 Low collector-emitter saturation voltage VCEsat
 High collector current capability: IC and ICM
 High efficiency leading to less heat generation
1.3 Applications
 Major application segments:
 Automotive 42 V power
 Telecom infrastructure
 Industrial
 Peripheral driver:
 Driver in low supply voltage applications (e.g. lamps and LEDs)
 Inductive load driver (e.g. relays, buzzers and motors)
 DC-to-DC converter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO
IC
ICM
collector-emitter voltage
collector current (DC)
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
open base
single pulse;
tp ⤠1 ms
IC = 1 A;
IB = 100 mA
Min Typ Max
Unit
-
-
100
V
-
-
1
A
-
-
3
A
[1] -
165 200
mΩ
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