PBSS5350SS Datasheet, PDF (1/14 Pages) NXP Semiconductors – 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

PBSS5350SS
50 V, 2.7 A PNP/PNP low V_CEsat (BISS) transistor
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double low V_CEsat Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
NXP
PBSS5350SS SOT96-1
Name
SO8
NPN/PNP
complement
PBSS4350SPN
NPN/NPN
complement
PBSS4350SS
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
V_CEO
I_C
I_CM
collector-emitter voltage
collector current
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = −2 A;
I_B = −200 mA
Min Typ Max
Unit
-
-
−50
V
-
-
−2.7
A
-
-
−5
A
[1] _-
95
140
mΩ