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PBSS5260PAP Datasheet, PDF (1/17 Pages) NXP Semiconductors – 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
PBSS5260PAP
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
12 December 2012
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC
collector current
ICM
peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
-60 V
-
-
-2
A
-
-
-3
A
-
-
250 mΩ
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