PBSS5160V Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A PNP low VCEsat (BISS) transistor

PBSS5160V
60 V, 1 A PNP low V_CEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High efficiency leading to less heat generation
„ Reduces printed-circuit board area required
„ Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
-
[1] _-
-
I_C = −1 A;
-
I_B = −100 mA
-
−60
-
−1
-
−2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ