PBSS5160U Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A PNP low VCEsat (BISS) transistor

PBSS5160U
60 V, 1 A PNP low V_CEsat (BISS) transistor
Rev. 04 — 2 October 2008
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High voltage DC-to-DC conversion
I High voltage MOSFET gate driving
I High voltage motor control
I High voltage power switches (e.g. motors, fans)
I Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current
[1] _-
peak collector current
single pulse;
-
t_p ≤ 1 ms
collector-emitter saturation I_C = −1 A;
[2] _-
resistance
I_B = −100 mA
-
−60 V
-
−1
A
-
−2
A
255 340 mΩ
[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.