PBSS5140T Datasheet, PDF (1/13 Pages) NXP Semiconductors – 40 V low VCEsat PNP transistor

PBSS5140T
40 V, 1 A PNP low V_CEsat BISS transistor
Rev. 04 — 29 July 2008
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4140T.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
1.3 Applications
I General-purpose switching and muting
I LCD backlighting
I Supply line switching circuits
I Battery-driven equipment (mobile phones, video cameras and handheld devices)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t_p ≤ 1 ms
I_C = −500 mA;
I_B = −50 mA
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
-
-
−40 V
-
-
−1
A
-
-
−2
A
[1] _-
300 < 500 mΩ