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| PBSS5112PAP Datasheet, PDF (1/17 Pages) NXP Semiconductors – 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | |||
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PBSS5112PAP
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
30 November 2012
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. NPN/NPN complement: PBSS4112PAN.
1.2 Features and benefits
⢠Very low collector-emitter saturation voltage VCEsat
⢠High collector current capability IC and ICM
⢠High collector current gain hFE at high IC
⢠Reduced Printed-Circuit Board (PCB) requirements
⢠High energy efficiency due to less heat generation
⢠AEC-Q101 qualified
1.3 Applications
⢠Load switch
⢠Battery-driven devices
⢠Power management
⢠Charging circuits
⢠Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC
collector current
ICM
peak collector current
VEBO
emitter-base voltage
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ⤠1 ms
open collector
IC = -500 mA; IB = -50 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
-120 V
-
-
-1
A
-
-
-1.5 A
-
-
-7
V
-
-
440 mΩ
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