PBSS4160V Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A NPN low VCEsat (BISS) transistor

PBSS4160V
60 V, 1 A NPN low V_CEsat (BISS) transistor
Rev. 03 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
Low V_CEsat (BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High efficiency, reduces heat generation
„ Reduces printed-circuit board area required
„ Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
„ Major application segments:
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management:
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
-
[1] _-
t = 1 ms or limited by T_j(max)
-
I_C = 1 A; I_B = 100 mA
[2] _-
- 60 V
- 1A
- 2A
200 250 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, 1 cm² collector
mounting pad.
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.