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PBSS4160U Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A NPN low VCEsat (BISS) transistor | |||
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PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 03 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70)
Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160U.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 High collector current capability: IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 High voltage DC-to-DC conversion
 High voltage MOSFET gate driving
 High voltage motor control
 High voltage power switches (e.g. motors, fans)
 Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
collector-emitter voltage
collector current (DC)
open base
-
-
60 V
[1] -
-
1
A
ICM
RCEsat
peak collector current
single pulse; tp ⤠1 ms
-
collector-emitter saturation IC = 1 A; IB = 100 mA [2] -
resistance
-
2
A
230 280 mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ⤠300 μs; δ ⤠0.02.
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