PBSS4130QA Datasheet, PDF (1/17 Pages) NXP Semiconductors – 30 V, 1 A NPN low VCEsat (BISS) transistor

PBSS4130QA
30 V, 1 A NPN low VCEsat (BISS) transistor
28 August 2013
Product data sheet
1. General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
PNP complement: PBSS5130QA.
2. Features and benefits
• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• High energy efficiency due to less heat generation
• Reduced Printed-Circuit Board (PCB) area requirements
• Solderable side pads
• AEC-Q101 qualified
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; t_p ≤ 1 ms
collector-emitter
saturation resistance
I_C = 1 A; I_B = 0.1 A; pulsed; t_p ≤ 300 µs;
δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
30
V
-
-
1
A
-
-
1.5 A
-
175 235 mΩ
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