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PBSS4032SPN Datasheet, PDF (1/20 Pages) NXP Semiconductors – 30 V NPN/PNP low VCEsat (BISS) transistor | |||
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PBSS4032SPN
30 V NPN/PNP low VCEsat (BISS) transistor
Rev. 1 â 14 July 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4032SPN SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4032SN
PNP/PNP
complement
PBSS4032SP
1.2 Features and benefits
 Low collector-emitter saturation voltage VCEsat
 Optimized switching time
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 DC-to-DC conversion
 Battery-driven devices
 Power management
 Charging circuits
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
TR1; NPN low VCEsat transistor
VCEO collector-emitter voltage
IC
collector current
ICM
peak collector current
RCEsat collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ⤠1 ms
IC = 4 A; IB = 0.4 A
Min Typ Max Unit
-
-
30 V
-
-
5.7 A
-
-
10 A
[1] -
45 62.5 mΩ
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