PBSS4032PD Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 2.7 A PNP low VCEsat (BISS) transistor

PBSS4032PD
30 V, 2.7 A PNP low V_CEsat (BISS) transistor
Rev. 01 — 27 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032ND.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ Optimized switching time
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ Battery-driven devices
„ Power management
„ Charging circuits
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t_p ≤ 1 ms
I_C = −3 A;
I_B = −300 mA
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
-
-
−30 V
-
-
−2.7 A
-
-
−5
A
[1] _-
88
130 mΩ