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PBSS4032NT Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 2.6 A NPN low VCEsat (BISS) transistor | |||
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PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
Rev. 01 â 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 Optimized switching time
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High energy efficiency due to less heat generation
 AEC-Q101 qualified
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 DC-to-DC conversion
 Battery-driven devices
 Power management
 Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ⤠1 ms
IC = 2.5 A;
IB = 0.25 A
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Min Typ Max Unit
-
-
30
V
-
-
2.6 A
-
-
5
A
[1] -
76
105 mΩ
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