PBSS3515E Datasheet, PDF (1/12 Pages) NXP Semiconductors – 15 V, 0.5 A PNP low VCEsat (BISS) transistor

PBSS3515E
15 V, 0.5 A PNP low V_CEsat (BISS) transistor
Rev. 02 — 27 April 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in an ultra small
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS2515E.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Low power switches (e.g. motors, fans)
I Portable applications
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
R_CEsat
collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = −500 mA;
I_B = −50 mA
Min Typ Max Unit
-
-
−15 V
-
-
−0.5 A
-
-
−1
A
[1] _-
300 500 mΩ