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PBSS306PX Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 3.7 A PNP low VCEsat (BISS) transistor | |||
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PBSS306PX
100 V, 3.7 A PNP low VCEsat (BISS) transistor
Rev. 02 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NX.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 High-voltage DC-to-DC conversion
 High-voltage MOSFET gate driving
 High-voltage motor control
 High-voltage power switches (e.g. motors, fans)
 Thin Film Transistor (TFT) backlight inverter
 Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
-
collector current
-
peak collector current
single pulse;
-
tp ⤠1 ms
collector-emitter saturation IC = â4 A;
[1] -
resistance
IB = â400 mA
-
â100 V
-
â3.7 A
-
â7.4 A
52
75
mΩ
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
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