PBSS306NZ Datasheet, PDF (1/14 Pages) NXP Semiconductors – 100 V, 5.1 A NPN low VCEsat (BISS) transistor

PBSS306NZ
100 V, 5.1 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PZ.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High-voltage DC-to-DC conversion
„ High-voltage MOSFET gate driving
„ High-voltage motor control
„ High-voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current
-
peak collector current
single pulse;
-
t_p ≤ 1 ms
collector-emitter saturation I_C = 4 A;
[1] _-
resistance
I_B = 200 mA
-
100 V
-
5.1
A
-
10.2 A
43
60
mΩ
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.