PBSS304PD Datasheet, PDF (1/15 Pages) NXP Semiconductors – 80 V, 3 A PNP low VCEsat (BISS) transistor

PBSS304PD
80 V, 3 A PNP low V_CEsat (BISS) transistor
Rev. 02 — 24 March 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS304ND.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
I Automotive applications
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
R_CEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = −2 A;
I_B = −200 mA
Min Typ Max Unit
-
-
−80 V
[1] _-
-
−3
A
-
-
−5
A
[2] _-
75
100 mΩ
[1] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.