PBSS303NZ Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 5.5 A NPN low VCEsat (BISS) transistor

PBSS303NZ
30 V, 5.5 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 20 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS303PZ.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ MOSFET gate driving
„ Motor control
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CEO collector-emitter voltage
I_C
collector current
I_CM
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = 4 A;
I_B = 200 mA
Min Typ Max
Unit
-
-
30
V
-
-
5.5
A
-
-
11
A
[1] _-
35
50
mΩ