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PBSS302PD Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V PNP low VCEsat (BISS) transistor | |||
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PBSS302PD
40 V, 4 A PNP low VCEsat (BISS) transistor
Rev. 02 â 6 December 2007
Product data sheet
1. Product proï¬le
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.
1.2 Features
I Ultra low collector-emitter saturation voltage VCEsat
I 4 A continuous collector current capability IC
I Up to 15 A peak current
I Very low collector-emitter saturation resistance
I High efï¬ciency due to less heat generation
1.3 Applications
I Power management functions
I Charging circuits
I DC-to-DC conversion
I MOSFET gate driving
I Power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ⤠1 ms
IC = â6 A;
IB = â600 mA
Min Typ Max
-
-
â40
[1] -
-
â4
-
-
â15
[2] -
55
75
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Unit
V
A
A
mâ¦
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