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PBSS301PZ Datasheet, PDF (1/14 Pages) NXP Semiconductors – 12 V, 5.7 A PNP low VCEsat (BISS) transistor | |||
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PBSS301PZ
12 V, 5.7 A PNP low VCEsat (BISS) transistor
Rev. 02 â 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS301NZ.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 DC-to-DC conversion
 MOSFET gate driving
 Motor control
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC
collector current
ICM
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
open base
single pulse;
tp ⤠1 ms
IC = â4 A;
IB = â200 mA
Min Typ Max
Unit
-
-
â12
V
-
-
â5.7
A
-
-
â11.4 A
[1] -
32.5 45
mΩ
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