PBSS2540E Datasheet, PDF (1/11 Pages) NXP Semiconductors – 40 V, 500 mA NPN low VCEsat (BISS) transistor

PBSS2540E
40 V, 500 mA NPN low V_CEsat (BISS) transistor
Rev. 02 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD
plastic package.
PNP complement: PBS3540E.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability: I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ MOSFET gate driving
„ Motor control
„ Charging circuits
„ Low power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CEO collector-emitter voltage
I_C
collector current (DC)
I_CM
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02
Conditions
open base
I_C = 500 mA;
I_B = 50 mA
Min Typ Max
Unit
-
-
40
V
-
-
500
mA
-
-
1
A
[1] _-
380 500
mΩ