PBSM5240PFH Datasheet, PDF (1/20 Pages) NXP Semiconductors – 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

PBSM5240PFH
40 V, 2 A PNP low V_CEsat (BISS) transistor with N-channel
Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Combination of PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor and
N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The
device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
 Very low collector-emitter saturation voltage V_CEsat
 High collector current capability I_C and I_CM
 High energy efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 Load switch
 Power management
 Power switches (e.g. motors, fans)
 Battery-driven devices
 Charging circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
PNP low V_CEsat (BISS) transistor
V_CEO collector-emitter voltage open base
I_C
collector current
I_CRM
repetitive peak collector
current
I_CM
R_CEsat
peak collector current
collector-emitter
saturation resistance
single pulse; t_p  1 ms
I_C = 500 mA;
I_B = 50 mA
Min Typ Max Unit
-
[1] _-
[1][5] _-
[1] _-
[2] _-
-
40 V
1.8 A
-
2 A
-
3 A
240 340 m