PBRP113ET Datasheet, PDF(1/12 Page) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW

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PBRP113ET Datasheet, PDF (1/12 Pages) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW

PBRP113ET

PNP 800 mA, 40 V BISS RET; R1 = 1 kâ¦, R2 = 1 kâ¦

Rev. 01 â 17 December 2007

Product data sheet

1. Product proï¬le

1.1 General description

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBRN113ET.

1.2 Features

I 800 mA repetitive peak output current

I High current gain hFE

I Built-in bias resistors

I Simpliï¬es circuit design

I Low collector-emitter saturation voltage

VCEsat

I Reduces component count

I Reduces pick and place costs

I Â±10 % resistor ratio tolerance

1.3 Applications

I Digital application in automotive and

industrial segments

I Medium current peripheral driver

I Switching loads

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

VCEO

collector-emitter voltage

open base

â40 V

output current

[1][2] -

â600 mA

IORM

repetitive peak output current tp â¤ 1 ms;

[3] -

â800 mA

Î´ â¤ 0.33

bias resistor 1 (input)

0.7 1

1.3 kâ¦

R2/R1

bias resistor ratio

0.9 1

1.1

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

collector 1 cm2.

[2] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

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