PBRN123E Datasheet, PDF(1/17 Page) NXP Semiconductors – NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ

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PBRN123E Datasheet, PDF (1/17 Pages) NXP Semiconductors – NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PBRN123E series

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kâ¦, R2 = 2.2 kâ¦

Rev. 01 â 27 February 2007

Product data sheet

1. Product proï¬le

1.1 General description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistors (RET) family in small plastic packages.

Table 1. Product overview

Type number

Package

NXP

PBRN123EK

SOT346

PBRN123ES[1]

SOT54

PBRN123ET

SOT23

JEITA

SC-59A

SC-43A

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

JEDEC

TO-236

TO-92

TO-236AB

1.2 Features

I 800 mA output current capability

I High current gain hFE

I Built-in bias resistors

I Simpliï¬es circuit design

I Low collector-emitter saturation voltage

VCEsat

I Reduces component count

I Reduces pick and place costs

I Â±10 % resistor ratio tolerance

1.3 Applications

I Digital application in automotive and

industrial segments

I Medium current peripheral driver

I Switching loads

1.4 Quick reference data

Table 2.

Symbol

VCEO

Quick reference data

Parameter

Conditions

collector-emitter voltage

open base

output current

PBRN123EK, PBRN123ET

PBRN123ES

Min Typ Max Unit

40 V

[1]

600 mA

800 mA

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