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PBLS6021D Datasheet, PDF (1/16 Pages) NXP Semiconductors – 60 V, 1.5 A PNP BISS loadswitch | |||
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PBLS6021D
60 V, 1.5 A PNP BISS loadswitch
Rev. 01 â 12 August 2009
Product data sheet
1. Product proï¬le
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualiï¬ed
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC
collector current
ICM
peak collector current
single pulse;
tp ⤠1 ms
RCEsat
collector-emitter saturation IC = â1.5 A;
resistance
IB = â100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Min Typ
-
-
-
-
-
-
[1] -
110
-
-
-
-
1.54 2.2
0.8 1
Max Unit
â60 V
â1.5 A
â3
A
175 mâ¦
50
V
100 mA
2.86 kâ¦
1.2
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