|
PBLS4004D Datasheet, PDF (1/15 Pages) NXP Semiconductors – 40 V PNP BISS loadswitch | |||
|
PBLS4004D
40 V PNP BISS loadswitch
Rev. 03 â 6 January 2009
Product data sheet
1. Product proï¬le
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
-
-
IC
collector current
[1] -
-
RCEsat
collector-emitter saturation IC = â500 mA; [2] -
240
resistance
IB = â50 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
-
-
-
-
15.4 22
R2/R1
bias resistor ratio
0.8 1
Max
â40
â1
340
50
100
28.6
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Unit
V
A
mâ¦
V
mA
kâ¦
|
▷ |