PBLS2004D Datasheet, PDF (1/16 Pages) NXP Semiconductors – 20 V PNP BISS loadswitch

PBLS2004D
20 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low V_CEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
TR1; PNP low V_CEsat transistor
V_CEO
collector-emitter voltage open base
I_C
collector current (DC)
R_CEsat
collector-emitter saturation I_C = −1 A;
resistance
I_B = −100 mA
TR2; NPN resistor-equipped transistor
V_CEO
I_O
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Min Typ
-
-
-
-
[1] _-
185
-
-
-
-
15.4 22
0.8 1
Max Unit
−20 V
−1
A
280 mΩ
50
V
100 mA
28.6 kΩ
1.2