NX3008PBKT Datasheet, PDF (1/16 Pages) NXP Semiconductors – 30 V, 200 mA P-channel Trench MOSFET

NX3008PBKT
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
 ESD protection up to 2 kV
 AEC-Q101 qualified
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = -4.5 V; T_amb = 25 °C
V_GS = -4.5 V;
I_D = -200 mA; T_j = 25 °C
Min Typ Max Unit
-
-
-30 V
-8 -
8V
[1] _-
-
-200 mA
-
2.8 4.1 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².