NE57810 Datasheet, PDF(1/16 Page) NXP Semiconductors – Advanced DDR memory termination power with external reference in

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NE57810 Datasheet, PDF (1/16 Pages) NXP Semiconductors – Advanced DDR memory termination power with external reference in

NE57810

Advanced DDR memory termination power with external

reference voltage in

Rev. 04 â 24 November 2008

Product data sheet

1. Introduction

The NE57810 is designed to provide power for termination of a Double Data Rate (DDR)

SDRAM memory bus. It signiï¬cantly reduces parts count, board space, and overall

system cost compared to previous solutions.

2. General description

The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus

voltage) that is half the RAM supply voltage. It is capable of providing up to Â± 3.5 A for

sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at

start-up. Overtemperature shutdown protects the device in extreme temperature

situations.

The package is thermally robust for ï¬exibility of thermal design. The NE57810 is a linear

regulator so no external inductors or switching FETs are necessary. Fast response to load

changes reduces the need for output capacitors.

3. Features

I Fast transient response time

I Overtemperature protection

I Overcurrent protection

I Commercial (0 Â°C to +70 Â°C) temperature range

I Reduced need for external components (switching FETs, inductors, decoupling

capacitors)

I Internal divider maintains termination voltage at half the memory supply voltage

I Reference out for other memory and control components

I Optional external voltage reference in for ï¬exible application

I Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems

4. Applications

I Desktop microcomputer systems

I Workstations

I Servers

I Game machines

I Set top boxes

I Embedded systems

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