KMZ41_10 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Magnetic field sensor Accurate and reliable angle measurement

KMZ41
Magnetic field sensor
Rev. 6 — 18 November 2010
Product data sheet
1. Product profile
1.1 General description
The KMZ41 is a sensitive magnetic field sensor, employing the magneto-resistive effect of
thin film permalloy. The sensor contains two galvanically separated Wheatstone bridges,
which enclose an angle of 45 degrees.
A rotating magnetic field strength > 40 kA/m (recommended field strength > 100 kA/m) in
the surface parallel to the chip (x-y plane) will deliver two independent sinusoidal output
signals, one following a cos(2α) and the second following a sin(2α) function.
The sensor can be operated at any frequency between DC and 1 MHz.
1.2 Features and benefits
„ Accurate and reliable angle measurement
„ Mechanical robustness, contactless principle
„ Wear-free operation
„ Accuracy independent of mechanical tolerances
„ Extended temperature range
1.3 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C and H_ext = 100 kA/m, V_CC = 5 V unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
V_CC
supply voltage
[1] _-
5
9
V_peak
peak voltage
see Figure 2
[1] _{73 81 89}
V_offset
offset voltage
per supply voltage;
see Figure 2
[1] _−2
-
+2
R_bridge bridge resistance
[1][2] _{2.0 2.5 3.0}
[1] Applicable for bridge 1 and bridge 2.
[2] Bridge resistance between pin 4 and pin 8, pin 3 and pin 7, pin 5 and pin 1, pin 6 and pin 2.
Unit
V
mV
mV/V
kΩ