KMZ41 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Magnetic field sensor

KMZ41
Magnetic field sensor
Rev. 05 — 27 November 2006
Product data sheet
1. Product profile
1.1 General description
The KMZ41 is a sensitive magnetic field sensor, employing the magneto-resistive effect of
thin film permalloy. The sensor contains two galvanic separated Wheatstone bridges,
which enclose an angle of 45 degrees.
A rotating magnetic field strength > 40 kA/m (recommended field strength > 100 kA/m) in
the surface parallel to the chip (x-y plane) will deliver two independent sinusoidal output
signals, one following a cos(2α) and the second following a sin(2α) function.
The sensor can be operated at any frequency between DC and 1 MHz.
Application notes AN00023 (contactless angle measurement using KMZ41 and UZZ9000)
and AN00004 (contactless angle measurement using KMZ41 and UZZ9001) are
available.
1.2 Features
I Accurate and reliable angle measurement
I Mechanical robustness, contactless principle
I Wear-free operation
I Accuracy independent on mechanical tolerances
I Extended temperature range
1.3 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C and H_ext = 100 kA/m, V_CC = 5 V unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
V_CC
V_peak
V_offset
supply voltage
peak voltage
offset voltage
see Figure 2
per supply voltage;
see Figure 2
[1] _-
5
9
[1] _{70 78 86}
[1] _−2
-
+2
R_bridge bridge resistance
[1][2] _{2.0 2.5 3.0}
[1] Applicable for bridge 1 and bridge 2.
[2] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 5 to pin 1 and pin 6 to pin 2.
Unit
V
mV
mV/V
kΩ