CGY888C Datasheet, PDF(1/7 Page) NXP Semiconductors – 34 dB, 870 MHz GaAs push-pull forward amplifier

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CGY888C Datasheet, PDF (1/7 Pages) NXP Semiconductors – 34 dB, 870 MHz GaAs push-pull forward amplifier

CGY888C

34 dB, 870 MHz GaAs push-pull forward ampliï¬er

Rev. 03 â 14 October 2009

Product data sheet

1. Product proï¬le

CAUTION

1.1 General description

Hybrid ampliï¬er module in a SOT115J package, operating at a supply voltage of 24 V

Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs

MMIC.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I High gain

I Excellent linearity

I Superior levels of ESD protection

I Extremely low noise

I Excellent return loss properties

I Gain compensation over temperature

I Rugged construction

I Unconditionally stable

I Thermally optimized design

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

I Integrated ring wave surge protection

1.3 Applications

I CATV systems operating in the 40 MHz to 870 MHz frequency range

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