CGY1047 Datasheet, PDF(1/7 Page) NXP Semiconductors – 1 GHz, 27 dB gain GaAs push-pull amplifier

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CGY1047 Datasheet, PDF (1/7 Pages) NXP Semiconductors – 1 GHz, 27 dB gain GaAs push-pull amplifier

CGY1047

1 GHz, 27 dB gain GaAs push-pull ampliï¬er

Rev. 01 â 30 July 2009

Product data sheet

1. Product proï¬le

1.1 General description

Hybrid ampliï¬er module in a SOT115J package, operating at a supply voltage of 24 V

Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.

1.2 Features

I Excellent linearity, stability and reliability

I Extremely low noise

I Excellent return loss properties

I Rugged construction

I Unconditionally stable

I Thermally optimized design

I Superior levels of ESD protection

I Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain

Hazardous Substances (RoHS)

I Integrated ring wave surge protection

1.3 Applications

I CATV systems operating in the 40 MHz to 1003 MHz frequency range

1.4 Quick reference data

Table 1. Quick reference data

Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 â¦; Tmb = 35 Â°C; unless otherwise

speciï¬ed.

Symbol Parameter

Conditions

Min Typ Max Unit

power gain

f = 45 MHz

f = 1003 MHz

25.0 -

27.0 dB

27.0 27.75 28.5 dB

CTB

CCN

Itot

composite triple beat

carrier-to-composite noise

total current

Vo = 44 dBmV

[1] -

â64

[1] -

[2] 230 250

dBc

270 mA

[1] 79 NTSC channels [f = 55.25 MHz to 547.25 MHz] + 75 digital channels [f = 547.25 MHz to 1003 MHz]

(â6 dB offset); ï¬at out level.

[2] Direct Current (DC).

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