CGY1041 Datasheet, PDF (1/8 Pages) NXP Semiconductors – 1 GHz, 21 dB gain GaAs push-pull amplifier

CGY1041
1 GHz, 21 dB gain GaAs push-pull amplifier
Rev. 1 — 10 February 2011
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Heterojunction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
„ Excellent linearity, stability and reliability
„ Extremely low noise
„ Excellent return loss properties
„ Rugged construction
„ Unconditionally stable
„ Thermally optimized design
„ Superior levels of ESD protection
„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
„ Integrated ring wave surge protection
„ Power gain is specified for both 870 MHz and 1003 MHz bandwidth
1.3 Applications
„ CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data
Bandwidth 40 MHz to 1003 MHz; V_B = 24 V (DC); Z_S = Z_L = 75 Ω; T_mb = 35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
G_p
power gain
f = 45 MHz
f = 870 MHz
19.0 20.0 21.0 dB
20.4 21.4 22.4 dB
f = 1003 MHz
21.0 21.75 22.5 dB
CTB
CCN
I_tot
composite triple beat
carrier-to-composite noise
total current
V_o = 44 dBmV
V_o = 44 dBmV
[1] _-
−62 -
dBc
[1] _-
63 -
dBc
[2] _-
265 280 mA
[1] 79 NTSC channels [f = 55.25 MHz to 547.25 MHz] + 75 digital channels [f = 547.25 MHz to 1003 MHz]
(−6 dB offset); flat output level.
[2] Direct Current (DC).