CGD944C Datasheet, PDF (1/7 Pages) NXP Semiconductors – 870 MHz, 25 dB gain power doubler amplifier

CGD944C
870 MHz, 25 dB gain power doubler amplifier
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
CAUTION
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ High output capability
„ Excellent linearity
„ Extremely low noise
„ Excellent return loss properties
„ Rugged construction
„ Gold metallization ensures excellent reliability
1.3 Applications
„ CATV systems operating in the 40 MHz to 870 MHz frequency range
1.4 Quick reference data
Table 1.
Symbol
G_p
I_tot
Quick reference data
Parameter
power gain
total current
[1] Direct Current (DC)
Conditions
f = 870 MHz
V_B = 24 V
Min Typ Max Unit
24
25
26
dB
[1] _-
450 -
mA