CGD1044H_09 Datasheet, PDF (1/7 Pages) NXP Semiconductors – 1 GHz, 25 dB gain high output power doubler

CGD1044H
1 GHz, 25 dB gain high output power doubler
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
CAUTION
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
„ High output power capability
„ Excellent linearity
„ Extremely low noise
„ Excellent return loss properties
„ Rugged construction
„ Unconditionally stable
„ Thermal optimized design
1.3 Applications
„ CATV systems operating in the 40 MHz to 1000 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data
Bandwidth to 1000 MHz; V_B = 24 V (DC); T_mb = 35 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
G_p
power gain
f = 45 MHz
f = 1000 MHz
-
24.0 -
dB
24.0 25.0 26.0 dB
I_tot
total current
[1] _{430 450 470 mA}
[1] Direct Current (DC).