CGD1042HI Datasheet, PDF (1/7 Pages) NXP Semiconductors – 1 GHz, 22 dB gain GaAs high output power doubler

CGD1042HI
1 GHz, 22 dB gain GaAs high output power doubler
Rev. 01 — 21 September 2009
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features
I Excellent linearity
I Superior levels of ESD protection
I Extremely low noise
I Excellent return loss properties
I Gain compensation over temperature
I Rugged construction
I Unconditionally stable
I Thermally optimized design
I Compliant to Directive 2002/95/EC, regarding Restriction of the use of certain
Hazardous Substances (RoHS)
I Integrated ring wave surge protection
1.3 Applications
I CATV systems operating in the 40 MHz to 1003 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data
Bandwidth 40 MHz to 1003 MHz; V_B = 24 V (DC); Z_S = Z_L = 75 Ω; T_mb = 35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
G_p
CTB
CCN
I_tot
power gain
composite triple beat
carrier-to-composite noise
total current
f = 50 MHz
f = 1003 MHz
V_o = 56.4 dBmV at 1003 MHz
V_o = 56.4 dBmV at 1003 MHz
-
22
[1] _-
[1] ₅₇
[2] _-
21.5 - dB
22.7 23.5 dB
−75 −65 dBc
63 - dBc
440 460 mA
[1] 79 NTSC channels [f = 54 MHz to 550 MHz] + 75 digital channels [f = 550 MHz to 1003 MHz] (−6 dB offset);
tilt extrapolated to 13.5 dB at 1003 MHz.
[2] Direct Current (DC).