CGD1042H Datasheet, PDF(1/7 Page) NXP Semiconductors – 1 GHz, 23 dB gain high output power doubler

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CGD1042H Datasheet, PDF (1/7 Pages) NXP Semiconductors – 1 GHz, 23 dB gain high output power doubler

CGD1042H

1 GHz, 23 dB gain high output power doubler

Rev. 01 â 9 October 2007

Product data sheet

1. Product proï¬le

CAUTION

1.1 General description

Hybrid ampliï¬er module in a SOT115J package, operating at a supply voltage of 24 V

Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I High output power capability

I Excellent linearity

I Extremely low noise

I Excellent return loss properties

I Rugged construction

I Unconditionally stable

I Thermal optimized design

1.3 Applications

I CATV systems operating in the 40 MHz to 1000 MHz frequency range

1.4 Quick reference data

Table 1. Quick reference data

Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 Â°C; unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Min Typ Max

power gain

f = 45 MHz

21.5 -

f = 1000 MHz

22.0 23.0 24.0

Itot

total current

[1] 430 450 470

[1] Direct Current (DC).

Unit

▷