BYV410-600 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Enhanced ultrafast dual rectifier diode

BYV410-600
Enhanced ultrafast dual rectifier diode
Rev. 01 — 29 June 2009
Product data sheet
1. Product profile
1.1 General description
Enhanced ultrafast dual rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
„ High thermal cycling performance
„ Low on state losses
„ Low thermal resistance
„ Soft recovery characteristic minimizes
power consuming oscillations
1.3 Applications
„ Dual mode (DCM and CCM) PFC
„ Power Factor Correction (PFC) for
Interleaved Topology
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_RRM
repetitive peak
reverse voltage
I_O(AV)
average output
current
Dynamic characteristics
t_rr
reverse recovery
time
Q_r
recovered charge
Static characteristics
V_F
forward voltage
Conditions
square-wave pulse; δ = 0.5;
T_mb ≤ 92 °C; both diodes
conducting; see Figure 1;
see Figure 2
I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs;
T_j = 25 °C; see Figure 5
I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs
I_F = 10 A; T_j = 150 °C
I_F = 10 A; T_j = 25 °C;
see Figure 4
Min Typ Max Unit
-
-
600 V
-
-
20 A
-
20 35 ns
-
15 28 C
-
1.3 1.9 V
-
1.4 2.1 V