BYV32G-200 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Dual ultrafast power diode

BYV32G-200
Dual ultrafast power diode
Rev. 01 — 11 January 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diode in a SOT226A (I2PAK) low-profile plastic package.
1.2 Features and benefits
„ High reverse voltage surge capability
„ High thermal cycling performance
„ Low thermal resistance
„ Soft recovery characteristic minimizes
power consuming oscillations
„ Very low on-state loss
1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
V_RRM
I_O(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
I_FSM
non-repetitive peak
forward current
I_RRM
repetitive peak reverse
current
V_ESD
electrostatic discharge
voltage
Static characteristics
V_F
forward voltage
Conditions
square-wave pulse; δ = 0.5 ;
T_mb ≤ 115 °C; both diodes
conducting; see Figure 1;
see Figure 2
T_j(init) = 25 °C; t_p = 10 ms;
sine-wave pulse; per diode
t_p = 2 µs; δ = 0.001
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
I_F = 8 A; T_j = 150 °C;
see Figure 4
Min Typ Max Unit
-
-
200 V
-
-
20 A
-
-
125 A
-
-
0.2 A
-
-
8
kV
-
0.72 0.85 V