BYV32EB-200 Datasheet, PDF (1/9 Pages) NXP Semiconductors – Dual rugged ultrafast rectifier diode, 20 A, 200 V

BYV32EB-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Rev. 04 — 2 March 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plastic
package.
1.2 Features and benefits
„ High reverse voltage surge capability
„ High thermal cycling performance
„ Low thermal resistance
„ Soft recovery characteristic minimizes
power consuming oscillations
„ Surface-mountable package
„ Very low on-state loss
1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_RRM
I_O(AV)
repetitive peak reverse voltage
average output current
square-wave pulse; δ = 0.5;
T_mb ≤ 115 °C; both diodes conducting;
see Figure 1; see Figure 2
I_RRM
repetitive peak reverse current t_p = 2 µs; δ = 0.001
V_ESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins
Dynamic characteristics
t_rr
reverse recovery time
I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/µs;
T_j = 25 °C; ramp recovery; see Figure 5
I_R = 1 A; I_F = 0.5 A; T_j = 25 °C; measured
at reverse current = 0.25 A; step
recovery; see Figure 6
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 150 °C; see Figure 4
Min Typ Max Unit
-
-
200 V
-
-
20 A
-
-
0.2 A
-
-
8
kV
-
20 25 ns
-
10 20 ns
-
0.72 0.85 V