BYR16W-1200 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Ultrafast power diode

BYR16W-1200
Ultrafast power diode
10 February 2014
Product data sheet
1. General description
Ultrafast power diode in a SOD142 (2-lead TO247) plastic package.
2. Features and benefits
• Fast switching
• Low forward voltage drop
• Low thermal resistance
• Soft recovery characteristic
• Reduces switching losses in associated MOSFET or IGBT
• Planar passivated for voltage ruggedness and reliability
3. Applications
• Switched-Mode Power Supplies
• Power factor correction diode
• Uninterrupted Power Supply
• Motor drive and SMPS freewheeling diode
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_RRM
repetitive peak reverse
voltage
I_F(AV)
average forward
current
δ = 0.5; T_mb ≤ 98 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
V_F
forward voltage
I_F = 16 A; T_j = 125 °C; Fig. 6
Dynamic characteristics
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V; dI_F/dt = 100 A/µs;
T_j = 25 °C; Fig. 7
Min Typ Max Unit
-
-
1200 V
-
-
16
A
-
1.8 2.7 V
-
50
-
ns
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