BYQ28X-200 Datasheet, PDF (1/10 Pages) NXP Semiconductors – Dual ultrafast rugged rectifier diode

BYQ28X-200
Dual ultrafast rugged rectifier diode
Rev. 02 — 5 February 2009
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package.
1.2 Features and benefits
„ Fast switching
„ Guaranteed ESD capability
„ High thermal cycling performance
„ Low on-state losses
„ Soft recovery minimizes
power-consuming oscillations
1.3 Applications
„ Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_RRM
repetitive peak
reverse voltage
I_O(AV)
average output
current
I_FRM
repetitive peak
forward current
Dynamic characteristics
t_rr
reverse recovery
time
Static characteristics
V_F
forward voltage
Electrostatic discharge
V_ESD
electrostatic
discharge voltage
Conditions
SQW; δ = 0.5; T_h ≤ 92 °C;
both diodes conducting; see
Figure 1; see Figure 2
SQW; δ = 0.5; t_p = 25 µs;
T_h ≤ 92 °C; per diode
I_F = 1 A; V_R = 30 V;
dI_F/dt = 100 A/µs;
T_j = 25 °C; ramp recovery;
see Figure 5
I_F = 5 A; T_j = 150 °C; see
Figure 4
HBM; C = 250 pF;
R = 1.5 kΩ; all pins
Min Typ Max Unit
-
-
200 V
-
-
10 A
-
-
10 A
-
15 25 ns
-
0.8 0.895 V
-
-
8
kV